Deep Reactive Ion Etcher

The DRIE system at 4D LABS is a Rapier™ ICP-DRIE system equipped with an LPX transport module. The system is configured with SF6 and C4F8 gases and operates based on the Bosch process for silicon deep etching. It is capable of etching silicon with high aspect ratios (>40) and fast etch rates (>20 µm/min) through PR masks. Endpoint detection is possible using the Claritas system. While not its primary function, the system is also capable of etching silicon oxide.

Tool Specs

Manufacturer SPTS
Model Rapier
Typical Application Deep etching of silicon
Location 6060.6
Related Documents

Standard Operating Procedure

Training Contact Hadi Esmaeilsabzali - hesmaeil@sfu.ca