Electron beam lithography

- minimum feature size: 20 nm
- beam energy: 100 eV – 30 keV
- thermal field emission source
- laser-interferometer controlled stage with 2 nm precision
- small pieces up to 100 mm wafers
- load lock for faster sample loading
- laser height sensing for focus correction

 

Tool Specs

Manufacturer Raith
Model e_LiNE
Typical Application Electron beam lithography
Location 6060.17
Related Documents
Training Contact Mohamad Rezaei
rezaei@4dlabs.ca